Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsCHOR, E. F; TAN, L. S.Solid-state electronics. 1993, Vol 36, Num 4, pp 553-562, issn 0038-1101Article

Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterCHOR, E. F; PENG, C. J.Japanese journal of applied physics. 1997, Vol 36, Num 11, pp 6694-6698, issn 0021-4922, 1Article

Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistorsCHOR, E. F; ASHBURN, P; BRUNNSCHWEILER, A et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 516-518, issn 0741-3106Article

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCHA, C. L; CHOR, E. F; GONG, H et al.Journal of materials science letters. 2000, Vol 19, Num 9, pp 817-821, issn 0261-8028Article

AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWANG, H. T; TAN, L. S; CHOR, E. F et al.Thin solid films. 2007, Vol 515, Num 10, pp 4476-4479, issn 0040-6090, 4 p.Conference Paper

Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCHA, C. L; CHOR, E. F; GONG, H et al.International conference on conduction and breakdown in solid dielectrics. 1998, pp 253-256, isbn 0-7803-4237-2Conference Paper

Effects of surface plasma treatment on n-GaN ohmic contact formationLI, L. K; TAN, L. S; CHOR, E. F et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 499-503, issn 0022-0248, 5 p.Conference Paper

Optical and electrical characterization of annealed silicon-implanted GaNWANG, H. T; TAN, L. S; CHOR, E. F et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 142-146, issn 0268-1242, 5 p.Article

Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCHA, C. L; CHOR, E. F; GONG, H et al.Microelectronics and reliability. 1998, Vol 38, Num 9, pp 1439-1446, issn 0026-2714Article

Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devicesCHA, C. L; CHOR, E. F; GONG, H et al.SPIE proceedings series. 1997, pp 368-375, isbn 0-8194-2644-XConference Paper

Steep retrograde indium channel profiling for high performance nMOSFETs device fabricationONG, S. Y; CHOR, E. F; LEUNG, Y. K et al.Microelectronics journal. 2002, Vol 33, Num 1-2, pp 55-60, issn 0959-8324Article

The development of a highly selective KI/I₂/H₂O/H₂SO₄ etchant for the selective etching of Al_0.3Ga_0.7As over GaAsLAU, W. S; CHOR, E. F; KEK, S. P et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3770-3774, issn 0021-4922, 1Article

Study of activation of beryllium implantation in gallium nitrideWANG, H. T; TAN, L. S; CHOR, E. F et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 489-493, issn 0022-0248, 5 p.Conference Paper

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistorsONG, S. Y; CHOR, E. F; LEE, James et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp G485-G489, issn 0013-4651Article

Steep Retrograde Indium Channel profiling for high performance nMOSFETsdevice fabricationONG, S. Y; CHOR, E. F; LEUNG, Y. K et al.SPIE proceedings series. 2000, pp 270-278, isbn 0-8194-3900-2Conference Paper

Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCHA, C. L; CHOR, E. F; JIA, Y. M et al.Journal of materials science letters. 1999, Vol 18, Num 17, pp 1427-1431, issn 0261-8028Article